공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-08-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-12-31
LTD Date2015-03-31
관련 부품
NXP SemiconductorsPBSS4140V,115
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
설명
유통업체에서 제공한 NXP Semiconductors PBSS5140V,115에 대한 설명입니다.
Tape & Reel (TR) Surface Mount PNP SINGLE Bipolar (BJT) Transistor 300 @ 100mA 5V 1A 500mW 150MHz
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 40V 1A 6-Pin SOT-666 T/R
Bipolar Transistor; Transistor Polarity:P Channel; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:300mW; DC Collector Current:-1A; DC Current Gain Max (hfe):300 ;RoHS Compliant: Yes
제조업체 별칭
NXP Semiconductors에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. NXP Semiconductors는 다음 이름으로도 알려져 있습니다:
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
기술 사양
Physical
Case/PackageSOT-666
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Collector Base Voltage (VCBO)40 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Voltage (VCEO)40 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency150 MHz
Gain Bandwidth Product150 MHz
hFE Min160
Max Breakdown Voltage40 V
Max Collector Current1 A
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-65 °C
Number of Elements1
PackagingDigi-Reel®
PolarityPNP
Power Dissipation500 mW
Transition Frequency150 MHz