가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | PDTC114TT,215 | 362 | 1 | Cut Tape | ||||||||
| Verical | PDTC114TT,215 | 186,000 | 14355 | |||||||||
| Rochester Electronics | PDTC114TT,215 | 230,724 | 19h | |||||||||
| Future Electronics | PDTC114TT,215 | 51,000 | 3K | Tape & Reel | ||||||||
| TME | PDTC114TT.215 | 53 | 1 | 17h |
대체 부품
Price @ 1000
$ 0.027
$ 0.035
Stock
1,402,707
14,479,875
Authorized Distributors
6
5
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23-3
TO-236-3
Polarity
NPN
NPN, PNP
Collector Emitter Breakdown Voltage
50 V
50 V
Max Collector Current
100 mA
100 mA
Transition Frequency
-
-
Collector Emitter Saturation Voltage
-
-
hFE Min
200
200
Power Dissipation
250 mW
-
공급망
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1997-09-01
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
관련 부품
Diodes Inc.DDTC114TUA-7-F
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Diodes Inc.DDTC115TUA-7-F
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
onsemiSMMUN2216LT3G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
onsemiMMUN2214LT1
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
설명
유통업체에서 제공한 Nexperia PDTC114TT,215에 대한 설명입니다.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
PDTC114TT Series 50 V 100 mA SMT NPN Resistor-Equipped Transistor- SOT-23
50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = open
BRT TRANSISTOR, NPN, 50V, 100MA, 10KOHM / OPEN, 3-SOT-23
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin TO-236AB T/R
100 mA 50 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB
; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:50V; Power Dissipation, Pd:250mW; DC Collector Current:100mA; DC Current Gain Max (hfe):200; Operating Temperature Range:-65°C to +150°C; No. of Pins:3 ;RoHS Compliant: Yes
TRANS NPN 50V 0.1A SOT23; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:50V; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-23; Case Style:SOT-23; Max Current Ic Continuous a:10mA; Max Voltage Vce Sat:150mV; Min Hfe:200; Power Dissipation:250mW; Termination Type:SMD; Transistor Type:General Purpose
제조업체 별칭
Nexperia에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Nexperia는 다음 이름으로도 알려져 있습니다:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
기술 사양
Physical
Case/PackageSOT-23-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Voltage (VCEO)50 V
Element ConfigurationSingle
hFE Min200
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation250 mW
TerminationSMD/SMT
Test Current5 mA
Zener Voltage4.3 V
Dimensions
Height6.35 mm
Length6.35 mm
Width6.35 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책