Nexperia PBSS305PX,115

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

80 V, 4.0 A PNP low VCEsat transistor

Trans GP BJT PNP 80V 4A Automotive 4-Pin(3+Tab) SOT-89 T/R

420mV@ 235mA,4.7A PNP 600mW 5V 100nA 80V 80V 4A SOT-89 4.6mm*2.6mm*1.6mm

80V 600mW 4A 70@5A2V 100MHz 300mV@4.7A235mA PNP +150¡Í@(Tj) SOT-89 Bipolar Transistors - BJT ROHS

Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency Typ, ft:100MHz; Power Dissipation Pd:2.1W; DC Collector Current:-4A; DC Current Gain Max (hfe):280 ;RoHS Compliant: Yes

TRANS PNP 80V 4A SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Power Dissipation Pd:600mW; DC Collector Current:-4A; DC Current Gain hFE:280; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:-50mV; Current Ic Continuous a Max:-500mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:200; Package / Case:SOT-89; Power Dissipation Pd:600mW; Termination Type:SMD; Transistor Type:Low Saturation (BISS)