가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | ZXTP2012ZTA | 684 | 1 | Cut Tape | ||||||||
| Arrow Electronics | ZXTP2012ZTA | 392 | 392 | |||||||||
| Verical | ZXTP2012ZTA | 428,000 | 1K | |||||||||
| Future Electronics | ZXTP2012ZTA | 12,000 | 1K | Tape & Reel | ||||||||
| TME | ZXTP2012ZTA | 0 | 1 | 21h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-06-03
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
ROHM2SB1561T100Q
Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
ROHMDTA023YEBTL
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
ROHMDTA043EEBTL
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
설명
유통업체에서 제공한 Diodes Inc. ZXTP2012ZTA에 대한 설명입니다.
Bipolar (BJT) Single Transistor, PNP, 80 V, 4.3 A, 1.5 W, SOT-89, Surface Mount
ZXTP2012Z Series PNP 60 V 4.3 A Medium Power Transistor SMT - SOT-89-3
Power Bipolar Transistor, 4.3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 60V 4.3A 2100mW 4-Pin(3+Tab) SOT-89 T/R
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOT-89
Contact PlatingTin
MountSurface Mount
Number of Pins4
Number of Terminals3
Weight51.993025 mg
Technical
Collector Base Voltage (VCBO)-100 V
Collector Emitter Breakdown Voltage-80 V
Collector Emitter Saturation Voltage215 mV
Collector Emitter Voltage (VCEO)60 V
Continuous Collector Current-4.3 A
Current4 A
Current Rating-4.3 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-7 V
Frequency120 MHz
Gain Bandwidth Product120 MHz
hFE Min10
Max Breakdown Voltage60 V
Max Collector Current4.3 A
Max Frequency120 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityPNP
Power Dissipation1.5 W
Schedule B8541290080
Transition Frequency120 MHz
Voltage60 V
Voltage Rating (DC)-60 V
Dimensions
Height1.6 mm
Length4.6 mm
Width2.6 mm