가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | BC856B,215 | 2,000 | 17h | |||||||||
| Future Electronics | BC856B,215 | 42,000 | 3K | Tape & Reel | ||||||||
| TME | BC856B.215 | 0 | 1 | 15h | ||||||||
| Newark | BC856B,215 | 0 | 5 | Cut Tape | ||||||||
| Avnet | BC856B,215 | 0 | 3K | 20h |
대체 부품
Price @ 1000
$ 0.024
$ 0.031
$ 0.031
Stock
3,006,420
2,002,340
2,002,340
Authorized Distributors
6
6
6
Mount
Surface Mount
-
-
Case/Package
SOT-23
SOT-23-3
SOT-23-3
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
65 V
-
-
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
100 MHz
100 MHz
100 MHz
Collector Emitter Saturation Voltage
650 mV
-650 mV
-650 mV
hFE Min
220
220
220
Power Dissipation
250 mW
300 mW
300 mW
공급망
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1993-03-01
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
관련 부품
onsemiFJV4101RMTF
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Diodes Inc.MMBTA55-7-F
Bipolar (BJT) Single Transistor, PNP, 60 V, 500 mA, 350 mW, SOT-23, Surface Mount
설명
유통업체에서 제공한 Nexperia BC856B,215에 대한 설명입니다.
Single Bipolar Transistor, PNP, 65 V, 100 mA, 250 mW, SOT-23 (TO-236AB), 3 Pins, Surface Mount
Bipolar junction transistor, PNP, -100 mA, -65 ## Fehler ##, SMD, SOT-23, BC856B,215
Transistor General Purpose BJT PNP 65 Volt 0.2 Amp 3-Pin TO-236AB Tape and Reel
BC856 Series 65V 100 mA 250 mW SMT PNP General Purpose Transistor - SOT-23
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Bipolar Transistors - BJT PNP GP 100MA 65V
Bipolar Transistors (BJT); BC856B,215; NEXPERIA; PNP; 3
Nexperia BC856B215 Nexperia MOSFET PNP transistor Tape Full reel
650mV@ 5mA,100mA PNP 250mW 5V 15nA 80V 65V 100mA 3000,SOT-23 1.1mm
Trans GP BJT PNP 65V 0.1A 3-Pin TO-236AB T/R
100 mA 65 V PNP Si SMALL SIGNAL TRANSISTOR TO-236AB
General Purpose Transistors 80V 100mA PNP SOT23 220~475
TRANSISTOR, PNP, -65V,SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-65V; Power Dissipation Pd:250mW; DC Collector Current:-100mA; DC Current Gain hFE:220; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
제조업체 별칭
Nexperia에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Nexperia는 다음 이름으로도 알려져 있습니다:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage65 V
Collector Emitter Saturation Voltage650 mV
Collector Emitter Voltage (VCEO)65 V
Current100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min220
Max Breakdown Voltage65 V
Max Collector Current100 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation250 mW
Schedule B8541210080
TerminationSMD/SMT
Transition Frequency100 MHz
Voltage65 V
Dimensions
Height1 mm
Length3 mm
Width1.4 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책