대체 부품
Price @ 1000
$ 0.052
$ 0.058
$ 0.058
Stock
35,414,637
3,838,251
3,838,251
Authorized Distributors
6
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-363
SOT-363
SOT-363
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
45 V
45 V
45 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
100 MHz
100 MHz
100 MHz
Collector Emitter Saturation Voltage
-
100 mV
100 mV
hFE Min
200
200
200
Power Dissipation
350 mW
200 mW
200 mW
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1997-09-01
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
관련 부품
onsemiSBC847CDW1T1G
ON SEMI SBC847CDW1T1G DUAL NPN BIPOLAR TRANSISTOR, 0.1 A, 45 V, 6-PIN SOT-363
Diodes Inc.BC847PN-7-F
BC847PN Series NPN/PNP 45 V 200 mW Small Signal Transistor Surface Mount-SOT-363
Diodes Inc.DDC114EU-7-F
Bipolar Pre-Biased / Digital Transistor, Dual NPN, 50 V, 100 mA, 10 kohm, 10 kohm
설명
유통업체에서 제공한 Nexperia BC847BS,115에 대한 설명입니다.
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
45 V, 100 mA NPN/NPN general-purpose transistor
Bipolar Transistors (BJT); BC847BS,115; NEXPERIA; NPN; 6
Trans GP BJT NPN 45V 0.1A 6-Pin TSSOP T/R
45V 220mW 100mA 2 NPN SC-70-6(SOT-363) Bipolar Transistors - BJT ROHS
100 mA 45 V 2 CHANNEL NPN Si SMALL SIGNAL TRANSISTOR
Bipolar Transistor Array; Module Configuration:Dual; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:45V; Transition Frequency Typ, ft:100MHz; Power Dissipation, Pd:220mW; DC Collector Current:100mA ;RoHS Compliant: Yes
TRANSISTOR, DUAL, NPN, 45V, SC-88; Transistor Polarity:Dual NPN; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:220mW; DC Collector Current:100mA; DC Current Gain hFE:200; Operating Temperature Min:-65°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-363; No. of Pins:6; MSL:-; SVHC:No SVHC (20-Jun-2013)
Transistor Polarity = NPN / Configuration = Dual Common Anode / Continuous Collector Current (Ic) mA = 100 / Collector-Emitter Voltage (Vceo) V = 45 / DC Current Gain (hFE) = 450 / Collector-Base Voltage (Vcbo) V = 50 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 100 / Power Dissipation (Pd) mW = 220 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Collector Emitter Saturation Voltage Max. (Vce(sat)) mV = 300 / Base Emitter Saturation Voltage Max. (Vbe(sat)) mV = 755
제조업체 별칭
Nexperia에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Nexperia는 다음 이름으로도 알려져 있습니다:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
기술 사양
Physical
Case/PackageSOT-363
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Voltage (VCEO)45 V
Current2 A
Element ConfigurationDual
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min200
Max Breakdown Voltage45 V
Max Collector Current100 mA
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation220 mW
Min Operating Temperature-65 °C
Number of Elements2
PolarityNPN
Power Dissipation350 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage45 V
Dimensions
Height6.35 mm
Length6.35 mm
Width6.35 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책