대체 부품
Price @ 1000
$ 0.054
$ 0.039
Stock
1,053,623
419,283
Authorized Distributors
5
4
Mount
Surface Mount
Surface Mount
Case/Package
TO-236-3
TO-236-3
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
50 V
Max Collector Current
100 mA
100 mA
Transition Frequency
100 MHz
100 MHz
Collector Emitter Saturation Voltage
250 mV
250 mV
hFE Min
210
210
Power Dissipation
250 mW
250 mW
공급망
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-03-16
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
관련 부품
ROHMDTC144GKAT146
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
ROHMDTC125TKAT146
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
설명
유통업체에서 제공한 Nexperia 2PD601ART,215에 대한 설명입니다.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 50V 0.1A 250mW 3-Pin SOT-23 T/R
50 V, 100 mA NPN general-purpose transistor
Trans Bjt Single, Npn, 50V, 100Ma; |Nexperia 2PD601ART,215
50V 250mW 100mA 210@2mA10V 100MHz 250mV@100mA10mA NPN +150¡Í@(Tj) SOT-23 Bipolar Transistors - BJT ROHS
100 mA 50 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB
Nexperia NPNTransistor, SOT-23 (TO-236AB)encapsulation, SMD mount, Maximum DC collector current100 mA, maximum collector-emission voltage50 V
TRANSISTOR, NPN, 50V, 100MA, SOT23, REEL; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 250mW; DC Collector Current: 100mA; DC Current Gain hFE: 90hFE
제조업체 별칭
Nexperia에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Nexperia는 다음 이름으로도 알려져 있습니다:
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- Infineon_Nexperia
- NEXPERIA (FORMERLY NXP) (4001801)
기술 사양
Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min210
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape (CT)
PolarityNPN
Power Dissipation250 mW
Transition Frequency100 MHz
Dimensions
Height1 mm
Length3 mm
Width1.4 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
규정 준수 정책