공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-08-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIPB65R660CFDATMA1
Power Mosfet, N Channel, 6 A, 650 V, 0.594 Ohm, 10 V, 4 V Rohs Compliant: Yes
InfineonIPB60R380C6ATMA1
INFINEON - IPB60R380C6ATMA1 - MOSFET Transistor, N Channel, 10.6 A, 600 V, 0.34 ohm, 10 V, 3 V
설명
유통업체에서 제공한 Littelfuse IXTA4N80P에 대한 설명입니다.
Disc Mosfet N-Ch Std-Polar To-263D2/ Tube |Littelfuse IXTA4N80P
Polar™ Series - 100V - 1200V N-Channel Standard Power MOSFETs, TO-263AA, RoHS
Littelfuse SCT
100W(Tc) 30V 5.5V@ 100¦ÌA 14.2nC@ 10 V 1N 800V 3.4¦¸@ 500mA,10V 3.6A 750pF@25V TO-263AA 9.9mm*9.2mm*4.5mm
Power Field-Effect Transistor, 3.6A I(D), 800V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
제조업체 별칭
Littelfuse에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Littelfuse는 다음 이름으로도 알려져 있습니다:
- LITTLEFUSE
- Littelfuse Inc
- LITTELFU
- LITTEL
- LITTELFUS
- LIT
- LITTELF
- LITTLE
- LITT
- LITTLEFUSE INC
- LTF
- LTL
- LFUSE
- LIF
- L/F
- LITTLEFUS
- LITTLEFU
- LITTEIFUSE
- Littelfuse/Commercial Vehicle Products
- LTFUSE
- LITTELFUSE FAR EAST PTE LTD
- Hartland Controls / Littelfuse
- LITL
- Littelfuse - Raychem
- LITTELFUSE/WICKMANN
기술 사양
Physical
Case/PackageTO-263
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)3.6 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance3.4 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time29 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance750 pF
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation100 W
Rds On Max3 Ω
Reverse Recovery Time600 ns
Rise Time24 ns
Turn-Off Delay Time60 ns