가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | IXFH15N100P | 30 | 30 | |||||||||
| Arrow Electronics | IXFH15N100P | 30 | 30 | |||||||||
| TME | IXFH15N100P | 248 | 1 | 13h | ||||||||
| DigiKey | 238-IXFH15N100P-ND | 845 | 1 | Tube | ||||||||
| TTI | IXFH15N100P | 0 | 30 | Tube | 18h |
관련 부품
STMicroelectronicsSTW13NK100Z
N-CHANNEL 1000V 0.56 Ohm 13.5A TO-247 ZENER-PROTECTED SUPERMESH™ POWER MOSFET
STMicroelectronicsSTW15NK90Z
N-CHANNEL 900V - 0.40͐2;6; - 15A - TO-247 Zener-Protected SuperMESH™ MOSFET
STMicroelectronicsSTW12NK80Z
N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in TO-247 package
InfineonSPW11N80C3FKSA1
Power MOSFET, General Purpose, N Channel, 800 V, 11 A, 0.39 ohm, TO-247, Through Hole
설명
유통업체에서 제공한 Littelfuse IXFH15N100P에 대한 설명입니다.
Single N-Channel 1000 Vds 760 mOhm 543 W Power Mosfet - TO-247
Trans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247
Discmosfetn-Ch Hiperfet-Polar To-247Ad/ Tube |Littelfuse IXFH15N100P
543W(Tc) 30V 6.5V@1mA 97nC@ 10 V 1N 1KV 760m¦¸@ 500mA,10V 15A 5.14nF@25V TO-247AD 16.26mm*5.3mm*21.46mm
Power Field-Effect Transistor, 15A I(D), 1000V, 0.76ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Polar™ Series - 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs), TO-247AD, RoHS
Littelfuse SCT
제조업체 별칭
Littelfuse에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Littelfuse는 다음 이름으로도 알려져 있습니다:
- LITTLEFUSE
- Littelfuse Inc
- LITTELFU
- LITTEL
- LITTELFUS
- LIT
- LITTELF
- LITTLE
- LITT
- LITTLEFUSE INC
- LTF
- LTL
- LFUSE
- LIF
- L/F
- LITTLEFUS
- LITTLEFU
- LITTEIFUSE
- Littelfuse/Commercial Vehicle Products
- LTFUSE
- LITTELFUSE FAR EAST PTE LTD
- Hartland Controls / Littelfuse
- LITL
- Littelfuse - Raychem
- LITTELFUSE/WICKMANN
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)15 A
Drain to Source Breakdown Voltage1 kV
Drain to Source Resistance760 mΩ
Drain to Source Voltage (Vdss)1 kV
Element ConfigurationSingle
Fall Time58 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance5.14 nF
Max Operating Temperature150 °C
Max Power Dissipation543 W
Min Breakdown Voltage1 kV
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation543 W
Rds On Max760 mΩ
Resistance760 MΩ
Reverse Recovery Time300 ns
Rise Time44 ns
Schedule B8541290080
Turn-Off Delay Time44 ns