공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
STMicroelectronicsSTW15NK90Z
N-CHANNEL 900V - 0.40͐2;6; - 15A - TO-247 Zener-Protected SuperMESH™ MOSFET
STMicroelectronicsSTW12NK90Z
N-channel 900 V, 0.72 Ohm, 11 A, TO-247 Zener-protected SuperMESH(TM) Power MOSFET
STMicroelectronicsSTW12NK80Z
N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in TO-247 package
InfineonSPW11N80C3FKSA1
Power MOSFET, General Purpose, N Channel, 800 V, 11 A, 0.39 ohm, TO-247, Through Hole
InfineonIPW90R500C3FKSA1
MOSFET N-CH 900V 11A TO247-3 / N-Channel 900 V 11A (Tc) 156W (Tc) Through Hole PG-TO247-3-1
설명
유통업체에서 제공한 STMicroelectronics STW13NK100Z에 대한 설명입니다.
N-CHANNEL 1000V 0.56 Ohm 13.5A TO-247 ZENER-PROTECTED SUPERMESH™ POWER MOSFET
STW13NK100Z N-CHANNEL MOSFET TRANSISTOR, 13 A, 1000 V, 3-PIN TO-247
N-CHANNEL 1000V-0.56OHM-13A-TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET Power Field-Effect Transistor, 13A I(D), 1000V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
N Channel Mosfet, 1Kv, 13A, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:13A; On Resistance Rds(On):0.7Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight9.071847 g
Technical
Continuous Drain Current (ID)13 A
Current Rating13 A
Drain to Source Breakdown Voltage1 kV
Drain to Source Resistance700 mΩ
Drain to Source Voltage (Vdss)1 kV
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance6 nF
Max Operating Temperature150 °C
Max Power Dissipation350 W
Min Breakdown Voltage1 kV
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation350 W
Rds On Max700 mΩ
Resistance700 mΩ
Rise Time35 ns
Threshold Voltage3.75 V
Turn-Off Delay Time145 ns
Turn-On Delay Time45 ns
Voltage Rating (DC)1 kV
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm