공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-11-02
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
onsemiHUFA75852G3-F085
Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
STMicroelectronicsSTW120NF10
N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in TO-247 package
설명
유통업체에서 제공한 Littelfuse IXFH120N20P에 대한 설명입니다.
IXYS SEMICONDUCTOR IXFH120N20P MOSFET Transistor, N Channel, 120 A, 200 V, 22 mohm, 10 V, 5 V
Trans MOSFET N-CH 200V 120A 3-Pin(3+Tab) TO-247AD
Polar™ Series - 100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs), TO-247AD, RoHS
Littelfuse SCT
MOSFET, Single - N-Channel, 200V, 120A, 714W, TO-247
IXYS NMOS HiperFET, Polar, Vds=200 V, 120 A, TO-247, , 3
MOSFET + Inverse Diode TO247AD
Power Field-Effect Transistor, 120A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
DiscMosfetN-CH HiPerFET-Polar TO-247AD
Mosfet, N-Ch, 200V, 120A, 175Deg C, 714W; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:120A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Ixys Semiconductor IXFH120N20P
제조업체 별칭
Littelfuse에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Littelfuse는 다음 이름으로도 알려져 있습니다:
- LITTLEFUSE
- Littelfuse Inc
- LITTELFU
- LITTEL
- LITTELFUS
- LIT
- LITTELF
- LITTLE
- LITT
- LITTLEFUSE INC
- LTF
- LTL
- LFUSE
- LIF
- L/F
- LITTLEFUS
- LITTLEFU
- LITTEIFUSE
- LTFUSE
- LITTELFUSE FAR EAST PTE LTD
- Hartland Controls / Littelfuse
- Littelfuse/Commercial Vehicle Products
- LITL
- Littelfuse - Raychem
- LITTELFUSE/WICKMANN
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time31 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation714 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation714 W
Rds On Max22 mΩ
Resistance22 MΩ
Reverse Recovery Time100 ns
Rise Time35 ns
Threshold Voltage5 V
Turn-Off Delay Time100 ns
Turn-On Delay Time30 ns
Dimensions
Height25.96 mm
Length16.26 mm
Width5.3 mm