공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-04-28
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonSPB18P06PGATMA1
MOSFET, P-CH, 60V, 18.7A, TO-263; Transistor Polarity:P Channel; Continuous Drai
InfineonIPB072N15N3GATMA1
Power MOSFET, N Channel, 150 V, 100 A, 72 mOhm, TO-263 (D2PAK), 3 Pins, Surface Mount
InfineonIPB083N10N3GATMA1
Power MOSFET, N Channel, 100 V, 80 A, 0.0072 ohm, TO-263 (D2PAK), Surface Mount
설명
유통업체에서 제공한 Littelfuse IXFA3N120에 대한 설명입니다.
MOSFET N-CH 1200V 3A TO263 / N-Channel 1200 V 3A (Tc) 200W (Tc) Surface Mount TO-263 (IXFA)
N-Channel 1200 V 4.5 Ohm SMT HiPerFET Power Mosfet - TO-263-3
Mosfet, N-Ch, 1.2Kv, 3A, To-263 Rohs Compliant: Yes |Littelfuse IXFA3N120.
Power Field-Effect Transistor, 3A I(D), 1200V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
제조업체 별칭
Littelfuse에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Littelfuse는 다음 이름으로도 알려져 있습니다:
- LITTLEFUSE
- Littelfuse Inc
- LITTELFU
- LITTEL
- LITTELFUS
- LIT
- LITTELF
- LITTLE
- LITT
- LITTLEFUSE INC
- LTF
- LTL
- LFUSE
- LIF
- L/F
- LITTLEFUS
- LITTLEFU
- LITTEIFUSE
- Littelfuse/Commercial Vehicle Products
- LTFUSE
- LITTELFUSE FAR EAST PTE LTD
- Hartland Controls / Littelfuse
- LITL
- Littelfuse - Raychem
- LITTELFUSE/WICKMANN
기술 사양
Physical
Case/PackageTO-263
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)3 A
Drain to Source Breakdown Voltage1.2 kV
Drain to Source Resistance4.5 Ω
Drain to Source Voltage (Vdss)1.2 kV
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.05 nF
Max Operating Temperature150 °C
Max Power Dissipation200 W
Min Breakdown Voltage1.2 kV
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation200 W
Rds On Max4.5 Ω
Reverse Recovery Time300 ns
Rise Time15 ns
Schedule B8541290080
Turn-Off Delay Time32 ns