공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
관련 부품
InfineonIRF540NSPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;D2Pak;PD 130W;VGS +/-20
InfineonIRF540NSTRLPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;D2Pak;PD 130W;VGS +/-20
InfineonIRFR3410TRPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 34Milliohms;ID 31A;D-Pak (TO-252AA);-55deg
설명
유통업체에서 제공한 International Rectifier IRFN250에 대한 설명입니다.
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
200V Single N-Channel Hi-Rel MOSFET in a SMD-1 package
Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN
제조업체 별칭
International Rectifier에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. International Rectifier는 다음 이름으로도 알려져 있습니다:
- I&R
- IRF
- IOR
- INT'L RECTIFIER
- INTERNATIONAL RECTIFIER CORP
- INTERNATIONAL RECTIF
- RECT
- INT RECTIFIER
- OMNIREL
- INTERNATIO
- INT RECT
- SEMCOR
- INTLRECT
- INTERNATIONA
- INTERNATIONAL R
- INTERNATIONAL MICROCIRCUITS
- InternationRectifer
- INTER RECTIFIER
- International Rectifier (IR)
- INTERNATI
- IR - International Rectifier
- INTERNATIONAL RECT
- INTERNATIONAL RECTIFIER SE
- INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
- INTER REC
- IR
- International Rect.
기술 사양
Physical
Body MaterialCeramic
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)27.4 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance105 mΩ
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance100 mΩ
PackagingBulk
Power Dissipation150 W