대체 부품
Price @ 1000
$ 0.66
$ 0.66
Stock
312,403
1,737,354
1,737,354
Authorized Distributors
0
6
6
Mount
-
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
SOIC
Drain to Source Voltage (Vds)
55 V
55 V
55 V
Continuous Drain Current (ID)
5.1 A
5.1 A
5.1 A
Threshold Voltage
-
1 V
1 V
Rds On Max
-
50 mΩ
50 mΩ
Gate to Source Voltage (Vgs)
-
20 V
20 V
Power Dissipation
-
2 W
2 W
Input Capacitance
-
740 pF
740 pF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-02-25
Lifecycle StatusObsolete (Last Updated: 1 month ago)
설명
유통업체에서 제공한 International Rectifier IRF7341TR에 대한 설명입니다.
55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Trans MOSFET N-CH Si 55V 4.7A 8-Pin SOIC T/R
Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
HEXFET® Power MOSFET
제조업체 별칭
International Rectifier에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. International Rectifier는 다음 이름으로도 알려져 있습니다:
- I&R
- IRF
- IOR
- INT'L RECTIFIER
- INTERNATIONAL RECTIFIER CORP
- INTERNATIONAL RECTIF
- RECT
- INT RECTIFIER
- OMNIREL
- INTERNATIO
- INT RECT
- SEMCOR
- INTLRECT
- INTERNATIONA
- INTERNATIONAL R
- INTERNATIONAL MICROCIRCUITS
- InternationRectifer
- INTER RECTIFIER
- International Rectifier (IR)
- INTERNATI
- IR - International Rectifier
- INTERNATIONAL RECT
- INTERNATIONAL RECTIFIER SE
- INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
- INTER REC
- IR
- International Rect.
기술 사양
Physical
Case/PackageSOIC
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)5.1 A
Current Rating4.7 A
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vds)55 V
Max Operating Temperature175 °C
Max Power Dissipation2 W
Min Breakdown Voltage55 V
Number of Elements2
Voltage Rating (DC)-55 V