가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | AUIRFS4310TRL | 22 | 32m | |||||||||
| Microchip USA | AUIRFS4310TRL | 123 | 600 | Tray | 19h | |||||||
| Win Source | WS-AUIRFS4310TRL | 11 | 7 | 1h | ||||||||
| Worldway Electronics | AUIRFS4310TRL | 12,721 | 7 | Tape & Reel | 1d | |||||||
| LCSC | C533400 | 10 | 1 | 10h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-07-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
InfineonIPB065N10N3GATMA1
MOSFET N-CH 100V 80A D2PAK / N-Channel 100 V 80A (Tc) 150W (Tc) Surface Mount PG-TO263-3
InfineonAUIRFS4410Z
MOSFET, N-CH, 100V, 97A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
STMicroelectronicsSTB100N10F7
N-channel 100 V, 0.0068 Ohm typ., 80 A STripFET F7 Power MOSFET in D2PAK package
InfineonIRFS7762TRLPBF
MOSFET N-CH 75V 85A D2PAK / N-Channel 75 V 85A (Tc) 140W (Tc) Surface Mount PG-TO263-3
설명
유통업체에서 제공한 International Rectifier AUIRFS4310TRL에 대한 설명입니다.
Trans MOSFET N-CH Si 100V 130A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
MOSFET N-CH 100V 75A D2PAK
MOSFET AUTO 100V 1 N-CH HEXFET 7mOhms
Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
제조업체 별칭
International Rectifier에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. International Rectifier는 다음 이름으로도 알려져 있습니다:
- I&R
- IRF
- IOR
- INT'L RECTIFIER
- INTERNATIONAL RECTIFIER CORP
- INTERNATIONAL RECTIF
- RECT
- INT RECTIFIER
- OMNIREL
- INTERNATIO
- INT RECT
- SEMCOR
- INTLRECT
- INTERNATIONA
- INTERNATIONAL R
- INTERNATIONAL MICROCIRCUITS
- InternationRectifer
- INTER RECTIFIER
- International Rectifier (IR)
- INTERNATI
- IR - International Rectifier
- INTERNATIONAL RECT
- INTERNATIONAL RECTIFIER SE
- INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
- INTER REC
- IR
- International Rect.
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time78 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.67 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation300 W
Rds On Max7 mΩ
Rise Time110 ns
Turn-Off Delay Time68 ns
Turn-On Delay Time26 ns
Dimensions
Height5.084 mm