대체 부품
Price @ 1000
$ 8.126
$ 13.02
Stock
114,682
105,304
Authorized Distributors
3
3
Mount
Through Hole
Through Hole
Case/Package
TO-247
TO-247-3
Drain to Source Voltage (Vdss)
650 V
600 V
Continuous Drain Current (ID)
47 A
47 A
Threshold Voltage
-
-
Rds On Max
70 mΩ
70 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
415 W
417 W
Input Capacitance
7 nF
7.015 nF
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-01-30
Lifecycle StatusNRND (Last Updated: 5 months ago)
관련 부품
STMicroelectronicsSTW54NM65ND
N-channel 650 V, 0.055 Ohm typ., 49 A FDmesh(TM) II Power MOSFET (with fast diode) in a TO-247 package
STMicroelectronicsSTW55NM60ND
Mosfet Transistor, N Channel, 51 A, 600 V, 0.047 Ohm, 10 V, 4 V Rohs Compliant: Yes
InfineonIPW65R080CFDAFKSA1
Power MOSFET, AEC-Q101, N Channel, 650 V, 43.3 A, 0.072 ohm, TO-247, Through Hole
설명
유통업체에서 제공한 Infineon SPW47N65C3FKSA1에 대한 설명입니다.
Power MOSFET, N Channel, 650 V, 47 A, 0.06 ohm, TO-247, Through Hole
650V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001.Replacement for 650V CoolMOS™ C3 is CoolMOS™ P7.
Power Field-Effect Transistor, 47A I(D), 650V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
MOSFET, N-CH, 650V, 47A, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.06ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Pow
MOSFET, N, TO-247; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:47A; On State Resistance:0.065ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-247; ;RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)47 A
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)650 V
Fall Time14 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7 nF
Max Dual Supply Voltage650 V
Max Operating Temperature150 °C
Max Power Dissipation415 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance70 mΩ
Package Quantity240
Power Dissipation415 W
Rds On Max70 mΩ
Rise Time27 ns
Schedule B8541290080
Turn-Off Delay Time210 ns
Turn-On Delay Time100 ns