가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | SPW47N60CFDFKSA1 | 0 | 240 | 5h | ||||||||
| Future Electronics | SPW47N60CFDFKSA1 | 0 | 240 | Tube | ||||||||
| Arrow Electronics | SPW47N60CFDFKSA1 | 0 | 240 | |||||||||
| Mouser | 726-SPW47N60CFD | 368 | 1 | Tube | ||||||||
| Weyland Electronics Group Pte. Ltd. | SPW47N60CFD | 3,013 | 1 | Tape & Reel | 4h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-04-11
Lifecycle StatusNRND (Last Updated: 4 months ago)
관련 부품
VishaySIHG47N60E-GE3
MOSFET, N CH, 600V, 47A, TO-247AC-3; Transistor Polarity:N Channel; Continuous D
VishaySIHW47N60E-GE3
MOSFET, N CH, 600V, 47A, TO-247AD-3; Transistor Polarity:N Channel; Continuous D
VishaySIHG47N60E-E3
MOSFET, N CH, 600V, 47A, TO-247AC; Transistor Polarity:N Channel; Continuous Dra
onsemiFCH072N60F-F085
MOSFET N-CH 600V 52A TO247-3 / N-Channel 600 V 52A (Tc) 481W (Tc) Through Hole TO-247-3
설명
유통업체에서 제공한 Infineon SPW47N60CFDFKSA1에 대한 설명입니다.
Power MOSFET, N Channel, 600 V, 46 A, 0.083 ohm, TO-247, Through Hole
Power Field-Effect Transistor, 46A I(D), 600V, 0.083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation.Replacement for CoolMOS™ CFD is 600V CoolMOS™ CFD7Characteristics and applications of CoolMOS ™ CFD2Improved cost performance, light load efficiency and ease-of-use in EMI and low voltage overshoot. Soft switching resonant topologies with hard commutation requirements requiring a fast body diode.
Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:46A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:417W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon SPW47N60CFDFKSA1.
MOSFET, N, COOLMOS, TO-247; Transistor type:MOSFET; Voltage, Vds typ:600V; Current, Id cont:46A; Resistance, Rds on:0.083R; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:4V; Case style:TO-247 (SOT-249); Temperature, operating range:-55°C to +150°C; Current, Id cont @ 25 degree C:46A; Current, Idm pulse:115A; Pins, No. of:3; Power dissipation:417W; Power, Pd:417W; Power, Ptot:417W; Temperature, Tj max:150°C; Temperature, Tj min:-55°C; Temperature, current:25°C; Temperature, full power rating:25°C; Transistor polarity:N; Transistors, No. of:1; Voltage, Vds:600V; Voltage, Vds max:600V; Voltage, Vgs th max:5V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247-3
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)46 A
Current Rating46 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance83 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.7 nF
Max Operating Temperature150 °C
Max Power Dissipation417 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance80 mΩ
Package Quantity240
Power Dissipation417 W
Rds On Max83 mΩ
Rise Time30 ns
Schedule B8541290080
Turn-Off Delay Time100 ns
Turn-On Delay Time30 ns
Voltage Rating (DC)600 V
Dimensions
Height21.1 mm
Length16.13 mm
Width5.21 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책