공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-01-22
Lifecycle StatusNRND (Last Updated: 3 months ago)
LTB Date2026-09-30
LTD Date2027-03-31
관련 부품
VishaySIHG24N65E-GE3
E-Series N-Ch 650 V 0.145 Ohm Flange Mount High Voltage Power Mosfet - TO-247AC
VishaySIHG25N50E-GE3
Mosfet, N-Ch, 500V, 26A, To-247Ac Rohs Compliant: Yes |Vishay SIHG25N50E-GE3
InfineonSPW20N60S5FKSA1
Single N-Channel 600 V 190 mOhm 79 nC CoolMOS Power Mosfet - TO-247-3, PG-TO247-3, RoHS
설명
유통업체에서 제공한 Infineon SPW24N60CFDFKSA1에 대한 설명입니다.
Trans MOSFET N-CH 600V 21.7A 3-Pin(3+Tab) TO-247 Tube
Power Field-Effect Transistor, 21.7A I(D), 600V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation.Replacement for CoolMOS™ CFD is 600V CoolMOS™ CFD7Characteristics and applications of CoolMOS ™ CFD2Improved cost performance, light load efficiency and ease-of-use in EMI and low voltage overshoot. Soft switching resonant topologies with hard commutation requirements requiring a fast body diode.
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:21.7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):185mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:240W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:21.7A; Package / Case:TO-247; Power Dissipation Pd:240W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)21.7 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance185 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.16 nF
Max Operating Temperature150 °C
Max Power Dissipation240 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance185 mΩ
Package Quantity240
Power Dissipation240 W
Rds On Max185 mΩ
Rise Time24 ns
Schedule B8541290080
Turn-Off Delay Time100 ns
Turn-On Delay Time50 ns