공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-07-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-01-31
LTD Date2012-07-31
설명
유통업체에서 제공한 Infineon SPP08P06P에 대한 설명입니다.
Trans MOSFET P-CH 60V 8.8A 3-Pin(3+Tab) TO-220 / SIPMOS Power-Transistor
SIPMOS POWER-TRANSISTOR Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:8.8A; On Resistance, Rds(on):0.3ohm; Package/Case:TO-220AB; Power Dissipation, Pd:42W; Current, Idm pulse:35.2A ;RoHS Compliant: Yes
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- Infineon Technologies
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기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)8.8 A
Current Rating-8.8 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance300 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage-60 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance420 pF
Max Operating Temperature175 °C
Max Power Dissipation42 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs-3 V
Number of Elements1
Power Dissipation42 W
Rds On Max300 mΩ
Rise Time46 ns
TerminationThrough Hole
Turn-Off Delay Time48 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)-60 V
Dimensions
Height15.95 mm
Lead Pitch2.54 mm
Length10.36 mm
Width4.57 mm