공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-12-17
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
관련 부품
설명
유통업체에서 제공한 onsemi FQP13N06L에 대한 설명입니다.
N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 13.6 A, 110 mΩ, TO-220
N-Channel 60 V 0.11 Ohm Through Hole Logic Mosfet - TO-220
Trans MOSFET N-CH 60V 13.6A 3-Pin(3+Tab) TO-220AB Rail
Avnet Japan
MOSFET, N, 60V, 13.6A; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.6A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.11ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissip
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications..
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)13.6 A
Current Rating13.6 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance140 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Channels1
Number of Elements1
Power Dissipation45 W
Rds On Max110 mΩ
Resistance110 mΩ
Rise Time90 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage2.5 V
Turn-Off Delay Time20 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)60 V
Dimensions
Height20.4 mm
Length10.1 mm
Width4.7 mm