공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-06-18
Lifecycle StatusEOL (Last Updated: 1 month ago)
LTB Date2026-09-30
LTD Date2027-03-31
관련 부품
InfineonIPP60R600P6XKSA1
N-Channel 600 V 7.3 A 600 mO 12 nC CoolMOS P6 Power Transistor - TO-220
STMicroelectronicsSTP11N65M5
N-channel 650 V, 0.43 Ohm, 9 A MDmesh(TM) V Power MOSFET in TO-220 package
설명
유통업체에서 제공한 Infineon SPP07N60C3XKSA1에 대한 설명입니다.
Trans MOSFET N-CH 600V 7.3A 3-Pin(3+Tab) TO-220 Tube / Cool MOS™ Power Transistor
COOL MOS POWER TRANSISTOR Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
MOSFET, N, COOLMOS, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:7.3A; Resistance, Rds On:0.6ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:21.9A; No. of Pins:3; Power Dissipation:83W; Power, Pd:83W; Power, Ptot:83W; SMD Marking:07N60C3; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:650V; Voltage, Vgs th Max:3.9V
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- Infineon Technologies
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기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)7.3 A
Current Rating7.3 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vdss)600 V
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance790 pF
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance600 mΩ
Package Quantity500
Power Dissipation83 W
Rds On Max600 mΩ
Rise Time3.5 ns
Schedule B8541290080
Turn-Off Delay Time60 ns
Turn-On Delay Time6 ns
Voltage Rating (DC)650 V