Infineon SPA07N60CFD

Transistor MOSFET Power N-CH 650V 6.6A 3-PIN PG-TO-220FP

Power Field-Effect Transistor, 6.6A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies, PG-TO220-3, RoHS

Mosfet, N Channel, 650V, 6.6A, To-220Fp-3; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:6.6A; Tensión Drenaje-Fuente Vds:650V; Resistencia De Activación Rds(On):0.59Ohm; Tensión Vgs De Medición Rds(On):10V |Infineon SPA07N60CFD

CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation. | Summary of Features: Fourth series of CoolMOS market entry in 2004; Fast Body Diode, Q rr 1/10th of C3 series, V th 4 V, g fs high, R g low; Specific for phase-shift ZVS and DC-AC power applications | Benefits: Improved efficiency; More efficient, more compact, lighter and cooler; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness | Target Applications: Solar; Adapter; PC power; Consumer; Server; Telecom