Infineon IRS2103STRPBF

600 V half-bridge gate driver IC with shoot through protection, SOIC 8N, RoHS

Tape & Reel (TR) IRS2103SPBF Half-Bridge 1996 gate driver 170ns -40C~150C TJ 290mA 600mA 625mW

IRS2103 Series 290 mA 20 V Supply Dual Half Bridge Driver - SOIC-8

MOSFET DRVR 600V 0.6A 2-OUT Hi/Lo Side Half Brdg Inv/Non-Inv 8-Pin SOIC T/R

Power MOSFET and IGBT Driver, 1/2 Bridge, 600V, 8-pin PDIP, T/R

Half Bridge 600mA 10V~20V 290mA SOIC-8 Gate Drive ICs ROHS

Half Bridge Driver, Separate High and Low Side Inputs, Inverting Low Side Input, Fixed 520ns Deadtime in a 8-Lead package

EiceDRIVER™ 600 V half bridge gate driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP.

MOSFET/IGBT DRIVER, HALF BRIDGE, SOIC-8; Driver Configuration: Half Bridge; Peak Output Current: -; Supply Voltage Min: 10V; Supply Voltage Max: 20V; Driver Case Style: SOIC; No. of Pins: 8Pins; Input Delay: 680ns; Output Delay: 150ns; Operating Temperature Min: -40°C; Operating Temperature Max: 125°C; Product Range: -; Automotive Qualification Standard: -; RoHS Phthalates Compliant: Yes; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

IGBT Gate Driver IC; Device Type:Half-Bridge; No. of Outputs:2; Output Voltage:620V; Output Current:600mA; Source Output Current Max:130mA; Sink Output Current:270mA; Power Dissipation, Pd:0.625W; Supply Voltage Min:10V ;RoHS Compliant: Yes