가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | IRS2101STRPBFCT-ND | 9,101 | 1 | Cut Tape | ||||||||
| Newark | IRS2101STRPBF | 1,666 | 1 | Cut Tape | ||||||||
| Future Electronics | IRS2101STRPBF | 2,500 | 2500 | Tape & Reel | ||||||||
| Arrow Electronics | IRS2101STRPBF | 2,488 | 1 | |||||||||
| Rochester Electronics | IRS2101STRPBF | 714 | 10h |
대체 부품
Price @ 1000
$ 0.547
$ 0.986
Stock
709,603
348,243
Authorized Distributors
6
6
Case/Package
SOP
SOP
Number of Pins
8
8
Channel Type
Independent
Independent
Number of Drivers
2
2
Max Output Current
600 mA
600 mA
Rise Time
70 ns
70 ns
Fall Time
35 ns
35 ns
Min Supply Voltage
10 V
10 V
Max Supply Voltage
20 V
20 V
Max Power Dissipation
625 mW
625 mW
관련 부품
InfineonIRS2608DSPBF
Tube IRS2608DSPBF Half-Bridge 1996 gate driver 220ns 125C 200mA 350mA 625mW
InfineonIRS2607DSTRPBF
Tape & Reel (TR) IRS2607DSPBF Half-Bridge 1996 gate driver 220ns -40C~150C TJ 200mA 350mA 625mW
InfineonAUIRS2181STR
Tape & Reel (TR) AU842992 Half-Bridge 2000 gate driver 60ns -40C~150C TJ 1.9A 2.3A 625mW
onsemiNCP5109ADR2G
85ns 2 10V 170ns 20V 800mV,2.3V Non-Inverting IGBT,MOSFET,N 35ns 250mA,500mA SOIC-8 , 1.5mm
onsemiNCP5109BDR2G
IC GATE DRVR HALF-BRIDGE 8SOIC / Half-Bridge Gate Driver IC Non-Inverting 8-SOIC
MicrochipMIC4127YME
MOSFET Driver 2 outputs, Low Side, 4.5V-20V supply, 1.5A and 8 ohm output, SOIC-8
설명
유통업체에서 제공한 Infineon IRS2101STRPBF에 대한 설명입니다.
600 V high-side and low-side gate driver IC, SOIC 8N, RoHS
Infineon SCT
Power MOSFET and IGBT Driver, High Voltage, High Speed, 600V, 8-pin PDIP, T/R
Avnet Japan
IRS2101 Series 600 V 290 mA 20 V Supply Dual High And Low Side Driver - SOIC-8
Gate Drivers The factory is currently not accepting orders for this product
Gate Drivers; INFINEON; IRS2101STRPBF; 1; 10 V - 20 V; 8; Surface Mount
EiceDRIVER™ 600 V high and low side gate driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC package IGBTs and MOSFETs. Also available in 8 Lead PDIP.
MOSFET/IGBT DRIVER, HIGH/LOW SIDE, SOIC; Driver Configuration: High Side and Low Side; Peak Output Current: 270mA; Supply Voltage Min: 10V; Supply Voltage Max: 20V; Driver Case Style: SOIC; No. of Pins: 8Pins; Input Delay: 160ns; Output Delay: 150ns; Operating Temperature Min: -40°C; Operating Temperature Max: 125°C; Product Range: -; Automotive Qualification Standard: -; RoHS Phthalates Compliant: Yes; MSL: MSL 2 - 1 year; SVHC: No SVHC (27-Jun-2018)
IGBT Gate Driver IC; Device Type:High and Low Side; No. of Outputs:2; Output Voltage:620V; Output Current:600mA; Source Output Current Max:100mA; Sink Output Current:210mA; Power Dissipation, Pd:0.625W; Supply Voltage Min:10V ;RoHS Compliant: Yes
제조업체 별칭
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOP
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight540.001716 mg
Technical
Ambient Temperature Range High125 °C
Channel TypeIndependent
Fall Time35 ns
Max Junction Temperature (Tj)150 °C
Max Operating Temperature125 °C
Max Output Current600 mA
Max Power Dissipation625 mW
Max Supply Current270 µA
Max Supply Voltage20 V
Min Operating Temperature-40 °C
Min Supply Voltage10 V
Nominal Supply Current150 µA
Number of Channels2
Number of Circuits1
Number of Drivers2
Number of Outputs1
Operating Supply Current270 µA
Operating Supply Voltage15 V
Output Current600 mA
Output Voltage10 V
Package Quantity2500
PackagingTape & Reel
Power Dissipation625 mW
Propagation Delay220 ns
Rise Time70 ns
Schedule B8542310000
Temperature GradeAutomotive
Turn-Off Delay Time150 ns
Turn-On Delay Time160 ns
Dimensions
Height1.72 mm
Height - Seated (Max)1.75 mm
Length4.9 mm
Terminal Pitch1.27 mm
Width3.9 mm