공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-02-06
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2023-12-31
LTD Date2024-06-30
관련 부품
InfineonIRFU7546PBF
MOSFET N-CH 60V 56A IPAK N-Channel 60 V 56A (Tc) 99W (Tc) Through Hole IPAK (TO-251AA)
InfineonIRFU3607PBF
MOSFET N-CH 75V 56A IPAK N-Channel 75 V 56A (Tc) 140W (Tc) Through Hole IPAK (TO-251AA)
설명
유통업체에서 제공한 Infineon IRLU3636PBF에 대한 설명입니다.
N CHANNEL MOSFET, 60V, 99A, IPAK TranN CHANNEL MOSFET, 60V, 99A, IPAK
Single N-Channel 60 V 8.3 mOhm 49 nC HEXFET® Power Mosfet - TO-251
MOSFET N-CH 60V 50A IPAK N-Channel 60 V 50A (Tc) 143W (Tc) Through Hole IPAK
MOSFET, 60V, 99A, 6.8 MOHM, 33 NC QG, LOGIC LEVEL, I-PAK
60V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 99A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
143W(Tc) 16V 2.5V@ 100µA 49nC@ 4.5 V 1individualNChannel 60V 6.8mΩ@ 50A,10V 50A 3.779nF@50V TO-251 Through hole mounting 6.73mm*2.38mm*6.22mm
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:99A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):5.4mohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:143W ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)99 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance8.3 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time96 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance3.779 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation143 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Channels1
Number of Elements1
On-State Resistance6.8 mΩ
Package Quantity3000
Power Dissipation143 W
Rds On Max6.8 mΩ
Rise Time216 ns
Schedule B8541290080
Turn-Off Delay Time43 ns
Turn-On Delay Time45 ns
Dimensions
Height9.75 mm
Length6.7056 mm
Width2.3876 mm