가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFU7546PBF | 0 | 75 | Bulk | 12h | |||||||
| Farnell | IRFU7546PBF | 0 | 1 | 20h | ||||||||
| Microchip USA | IRFU7546PBF | 242 | 300 | Tube | 7d | |||||||
| Component Stockers USA | IRFU7546PBF | 14 | >1wk | |||||||||
| Worldway Electronics | IRFU7546PBF | 19,783 | 7 | Tube | 20h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-03-05
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-03-31
LTD Date2023-09-30
관련 부품
InfineonIRFU2405PBF
Power Field-Effect Transistor, 56A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 Infineon IRFU7546PBF에 대한 설명입니다.
TRANSISTOR, HEXFET POWER MOSFET, 60V, 7.9MOHM MAX, 56A, LEAD-FREE, I-PAK
60V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
Infineon SCT
MOSFET, N-CH, 60V, 56A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:56A; Source Voltage Vds:60V; On Resistance
Power Field-Effect Transistor, 56A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 56 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 6.6 / Gate-Source Voltage V = 20 / Fall Time ns = 20 / Rise Time ns = 28 / Turn-OFF Delay Time ns = 36 / Turn-ON Delay Time ns = 8.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 99
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기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)56 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance7.9 mΩ
Drain to Source Voltage (Vdss)60 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.02 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation99 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance7.9 mΩ
Package Quantity3000
Power Dissipation99 W
Rds On Max7.9 mΩ
Schedule B8541290080
Turn-Off Delay Time36 ns
Turn-On Delay Time8.1 ns
Dimensions
Height9.75 mm