공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-01-31
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
관련 부품
InfineonIRFU4510PBF
MOSFET N-CH 100V 56A IPAK N-Channel 100 V 56A (Tc) 143W (Tc) Through Hole IPAK (TO-251AA)
InfineonIRLU120NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;I-Pak (TO-251AA);PD 48W
설명
유통업체에서 제공한 Infineon IRLU3110ZPBF에 대한 설명입니다.
MOSFET N-CH 100V 42A IPAK N-Channel 100 V 42A (Tc) 140W (Tc) Through Hole IPAK (TO-251AA)
MOSFET, 100V, 63A, 14 mOhm, 34 nC Qg, Logic Level, I-Pak
MOSFET N-CH 100V 42A IPAK / Trans MOSFET N-CH Si 100V 63A 3-Pin(3+Tab) IPAK Tube
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
Infineon SCT
HEXFET Power MOSFET Power Field-Effect Transistor, 63A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:63A; On Resistance Rds(On):0.011Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Msl:- Rohs Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 63 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 14 / Gate-Source Voltage V = 16 / Fall Time ns = 48 / Rise Time ns = 110 / Turn-OFF Delay Time ns = 33 / Turn-ON Delay Time ns = 24 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 140
MOSFET, N, 100V, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:45A; Cont Current Id @ 25°C:63A; Current Id Max:42A; Package / Case:IPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:250A; Rth:1.05; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V; Voltage Vgs th Min:1V
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기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)63 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time48 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance3.98 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Channels1
Number of Elements1
On-State Resistance14 mΩ
Package Quantity3000
Power Dissipation140 W
Rds On Max14 mΩ
Rise Time110 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage2.5 V
Turn-Off Delay Time33 ns
Turn-On Delay Time24 ns
Dimensions
Height9.75 mm
Length6.6 mm
Width2.3 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책