Vishay IRFU9120PBF

Single P-Channel 100 V 0.6 Ohms Through Hole Power Mosfet - IPAK (TO-251)

Power MOSFET Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-5.6A; On Resistance, Rds(on):600mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:I-PAK ;RoHS Compliant: Yes

MOSFET, P, -100V, -5.6A, I-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:5.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:-5.6A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3°C/W; Lead Length:9.65mm; Lead Spacing:2.28mm; No. of Transistors:1; Package / Case:IPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:25A; Termination Type:Through Hole; Turn Off Time:25ns; Turn On Time:29ns; Voltage Vds Typ:-100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V