가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRLS3036PBF | 48 | 6h | |||||||||
| RS (Formerly Allied Electronics) | IRLS3036PBF | 0 | 250 | Bulk | 23h | |||||||
| Farnell | IRLS3036PBF | 0 | 1 | 1d | ||||||||
| Microchip USA | IRLS3036PBF | 243 | 150 | Tray | 23h | |||||||
| Win Source | WS-IRLS3036PBF | 1,800 | 12 | 7h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
InfineonAUIRLS3036TRL
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-PAK Package, D2PAK-3, RoHS
InfineonAUIRLS3036
MOSFET, N-CH, 60V, 270A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
STMicroelectronicsSTH260N6F6-2
N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package
STMicroelectronicsSTH265N6F6-2AG
MOSFET N-CH 60V 180A H2PAK-2 / N-Channel 60 V 180A (Tc) 300W (Tc) Surface Mount H2Pak-2
설명
유통업체에서 제공한 Infineon IRLS3036PBF에 대한 설명입니다.
Transistor: N-MOSFET; unipolar; HEXFET; 60V; 270A; 380W; D2PAK
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Benefits: RoHS Compliant; Logic Level | Target Applications: Battery Operated Drive
Trans MOSFET N-CH 60V 270A 3-Pin(2+Tab) D2PAK Tube
Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH 60V 195A D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:165A; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Id Max:270A; Package / Case:D2-PAK; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:60V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.5V
제조업체 별칭
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- Infineon Technologies
- INF
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- INFINEON/IR
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- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2.4 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time110 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance11.21 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation380 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Elements1
On-State Resistance2.4 mΩ
Package Quantity1000
Power Dissipation380 W
Rds On Max2.4 mΩ
Resistance2.4 MΩ
Rise Time220 ns
TerminationSMD/SMT
Threshold Voltage2.5 V
Turn-Off Delay Time110 ns
Turn-On Delay Time66 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm