대체 부품
Price @ 1000
$ 1.548
Stock
61,627
513,363
Authorized Distributors
1
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
195 A
195 A
Threshold Voltage
3.7 V
3.7 V
Rds On Max
2 mΩ
2 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
375 W
375 W
Input Capacitance
13.703 nF
13.703 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
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N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-2 package
InfineonAUIRLS3036TRL
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-PAK Package, D2PAK-3, RoHS
InfineonAUIRLS3036
MOSFET, N-CH, 60V, 270A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
STMicroelectronicsSTH265N6F6-2AG
MOSFET N-CH 60V 180A H2PAK-2 / N-Channel 60 V 180A (Tc) 300W (Tc) Surface Mount H2Pak-2
설명
유통업체에서 제공한 Infineon IRFS7530PBF에 대한 설명입니다.
N Channel 60 V 2 mO 375 W Surface Mount HexFet Power MosFet - D2PAK
Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 375 W
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 60V 295A 3-Pin(2+Tab) D2PAK Tube
Power Field-Effect Transistor, 195A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
MOSFET, N CH, 60V, 195A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.00165ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time104 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13.703 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2 mΩ
Package Quantity1000
Power Dissipation375 W
Rds On Max2 mΩ
Rise Time141 ns
Threshold Voltage3.7 V
Turn-Off Delay Time172 ns
Turn-On Delay Time52 ns
Dimensions
Height5.084 mm