대체 부품
Price @ 1000
$ 2.55
$ 0.797
$ 0.797
Stock
966,041
1,262,486
1,262,486
Authorized Distributors
1
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
42 A
42 A
42 A
Threshold Voltage
2.5 V
-
-
Rds On Max
14 mΩ
14 mΩ
14 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
16 V
Power Dissipation
140 W
140 W
140 W
Input Capacitance
3.98 nF
3.98 nF
3.98 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-01-31
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
관련 부품
InfineonAUIRFR3710Z
MOSFET N-CH 100V 42A DPAK N-Channel 100 V 42A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK)
InfineonIRFR3710ZPBF
MOSFET N-CH 100V 42A DPAK N-Channel 100 V 42A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK)
설명
유통업체에서 제공한 Infineon IRLR3110ZPBF에 대한 설명입니다.
MOSFET N-CH 100V 42A DPAK N-Channel 100 V 42A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK)
Single N-Channel 100 V 14 mOhm 34 nC HEXFET® Power Mosfet - TO-252AA
Trans MOSFET N-CH Si 100V 63A 3-Pin(2+Tab) DPAK Tube / MOSFET N-CH 100V 42A DPAK
Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, 100V, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3110; Current Id Max:42A; Package / Case:DPAK; Power Dissipation Pd:140W; Pulse Current Idm:250A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance14 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time48 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance3.98 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Channels1
Number of Elements1
On-State Resistance14 mΩ
Package Quantity3000
Power Dissipation140 W
Rds On Max14 mΩ
Recovery Time51 ns
Resistance14 MΩ
Rise Time110 ns
TerminationSMD/SMT
Threshold Voltage2.5 V
Turn-Off Delay Time33 ns
Turn-On Delay Time24 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책