Infineon IRLR2905ZPBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 42A;D-Pak (TO-252AA);PD 110W

Single N-Channel 55 V 13.5 mOhm 23 nC HEXFET® Power Mosfet - DPAK

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature; Logic Level | Target Applications: AC-DC

MOSFET, IPS, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:55V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:2905; Current Id Max:42A; Current Idss Max:250mA; Current Idss Min:20mA; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Package / Case:DPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:240A; Storage Temperature Max:175°C; Storage Temperature Min:-55°C; Termination Type:SMD; Turn Off Time:24ns; Turn On Time:14ns; Voltage Vds:55V; Voltage Vds Typ:55V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V