Infineon IRLR120NPBF

Name: Infineon IRLR120NPBF
Brand: Infineon
SKU: IRLR120NPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.185 Ohm; Id 10A; D-pak (TO-252AA); Pd 48W

$ 1.12

Obsolete

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRLR120NPBF	0	1	Bulk	1.240	1.120	1.120	1.120	1.120	15h
Farnell	IRLR120NPBF	0	5			0.841*	0.408*	0.326*	0.319*	23h
Win Source	WS-462764	149,130	190					0.224	0.207	23h
Worldway Electronics	IRLR120NPBF	18,922	7	Tube		0.075	0.073	0.069	0.069	22h
Fly-Wing Technology	IRLR120NPBF	131,333			0.269	0.220	0.214	0.200	0.200	20h

CAD 모델

심볼, 풋프린트 및 3D STEP 다운로드

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데이터시트 및 문서

Infineon IRLR120NPBF에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet12 페이지11년 전

Newark

TME

RS (Formerly Allied Electronics)

iiiC

공급망

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1998-01-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

설명

유통업체에서 제공한 Infineon IRLR120NPBF에 대한 설명입니다.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;D-Pak (TO-252AA);PD 48W

RS (Formerly Allied Electronics)

Transistor MOSFET Negative Channel 100 Volt 10A 3-Pin(2+Tab) DPAK

Jameco

Single N-Channel 100 V 0.265 Ohm 20 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:10A; On Resistance, Rds(on):185mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK ;RoHS Compliant: Yes

Newark

MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:100V; On Resistance Rds(on):185mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:10A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Power Dissipation Ptot Max:48W; Pulse Current Idm:35A; SMD Marking:IRLR120NPBF; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V

element14 APAC