가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRLL014NTRPBF | 7,500 | 2500 | 7h | ||||||||
| Newark | IRLL014NTRPBF | 2,967 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRLL014NTRPBF | 4,658 | 1 | |||||||||
| Future Electronics | IRLL014NTRPBF | 72,500 | 2500 | Tape & Reel | ||||||||
| DigiKey | IRLL014NPBFCT-ND | 45,967 | 1 | Cut Tape |
대체 부품
Price @ 1000
$ 0.295
$ 0.327
Stock
2,580,063
303,038
Authorized Distributors
6
3
Mount
Surface Mount
Surface Mount
Case/Package
SOT-223
SOT-223-4
Drain to Source Voltage (Vdss)
55 V
60 V
Continuous Drain Current (ID)
2 A
2.8 A
Threshold Voltage
2 V
2.5 V
Rds On Max
140 mΩ
110 mΩ
Gate to Source Voltage (Vgs)
16 V
20 V
Power Dissipation
2.1 W
2.1 W
Input Capacitance
230 pF
350 pF
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-10-07
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIRLL014NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.14Ohm;ID 2.8A;SOT-223;PD 2.1W;VGS +/-16V
InfineonIRFL014NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.16Ohm;ID 1.9A;SOT-223;PD 2.1W;VGS +/-20V
InfineonIRFL014NTRPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.16Ohm;ID 1.9A;SOT-223;PD 2.1W;VGS +/-20V
onsemiNIF9N05CLT3G
Protected Power MOSFET, N-Channel, Clamped, Logic Level, 2.6 A, 52 V, with ESD Protection
onsemiNIF9N05CLT3
Protected Power MOSFET, N-Channel, Clamped, Logic Level, 2.6 A, 52 V, with ESD Protection
onsemiHUFA75307T3ST
Transistor,Mosfet,N-Channel,55V V(Br)Dss,2.6A I(D),Sot-223 Rohs Compliant: Yes
설명
유통업체에서 제공한 Infineon IRLL014NTRPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.14Ohm;ID 2.8A;SOT-223;PD 2.1W;VGS +/-16V
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
Infineon SCT
Power MOSFET, HEXFET, N Channel, 55 V, 2 A, 0.14 ohm, SOT-223, Surface Mount
IRLL014NTRPBF,MOSFET, 55V, 2A, 140 MOHM, 9.5 NC QG, LOGIC LE
Trans MOSFET N-CH 55V 2.8A 4-Pin (3+Tab) SOT-223 T/R
HEXFET POWER MOSFET Small Signal Field-Effect Transistor, 2.8A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:1W; No. Of Pins:4Pins Rohs Compliant: Yes |Infineon Technologies IRLL014NTRPBF.
MOSFET, N CH 55V, 2A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 140 / Gate-Source Voltage V = 16 / Fall Time ns = 2.9 / Rise Time ns = 4.9 / Turn-OFF Delay Time ns = 14 / Turn-ON Delay Time ns = 5.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.1
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOT-223
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals4
Technical
Continuous Drain Current (ID)2 A
Current Rating2 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance140 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time2.9 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance230 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
On-State Resistance140 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation2.1 W
Rds On Max140 mΩ
Resistance200 mΩ
Rise Time4.9 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time14 ns
Turn-On Delay Time5.1 ns
Voltage Rating (DC)55 V
Dimensions
Height1.4478 mm
Length6.6802 mm
Width3.7 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책