공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-11-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2008-03-13
LTD Date2008-09-13
관련 부품
InfineonIRFIZ34NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS
International RectifierAUIRFIZ34N
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) Package
설명
유통업체에서 제공한 Infineon IRLIZ34NPBF에 대한 설명입니다.
MOSFET, 55V, 20A, 35 mOhm, 16.7 nC Qg, Logic Level, TO-220 FULLPACK
Single N-Channel 55 V 0.046 Ohm 25 nC HEXFET® Power Mosfet - TO-220-3FP
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 22A 3-Pin(3+Tab) TO-220FP
Power Field-Effect Transistor, 22A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, LOGIC, FULLPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:55V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:31W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:22A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2kV; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:31W; Power Dissipation Pd:31W; Pulse Current Idm:110A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 22 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 35 / Gate-Source Voltage V = 16 / Fall Time ns = 21 / Rise Time ns = 100 / Turn-OFF Delay Time ns = 29 / Turn-ON Delay Time ns = 8.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220FP / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 37
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기술 사양
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)22 A
Current Rating20 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance46 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time21 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance880 pF
Isolation Voltage2000 Vrms
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation31 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
On-State Resistance35 mΩ
Package Quantity2000
PackagingBulk
Power Dissipation31 W
Rds On Max35 mΩ
Resistance46 mΩ
Rise Time10 ns
Threshold Voltage2 V
Turn-Off Delay Time29 ns
Turn-On Delay Time8.9 ns
Voltage Rating (DC)55 V
Dimensions
Height9.8 mm
Length10.6172 mm
Width4.826 mm