가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRL8113STRLPBF | 0 | 800 | Bulk | 10h | |||||||
| Win Source | WS-IRL8113STRLPBF | 20 | 75 | 19h | ||||||||
| Worldway Electronics | IRL8113STRLPBF | 6,923 | 7 | Tape & Reel | 18h | |||||||
| SHENGYU ELECTRONICS | IRL8113STRLPBF | 12,520 | 1 | 3d | ||||||||
| Klychip | IRL8113STRLPBF | 문의하기 | 1 | >1wk |
대체 부품
Price @ 1000
$ 3.29
$ 3.39
Stock
19,463
100,642
Authorized Distributors
1
1
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
42 A
42 A
Threshold Voltage
-
-
Rds On Max
6 mΩ
6 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
110 W
110 W
Input Capacitance
2.84 nF
2.84 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-07-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
관련 부품
STMicroelectronicsSTB95N3LLH6
N-channel 30 V, 3.7 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in D2PAK package
onsemiNTB125N02RT4
Cut Tape (CT) Surface Mount N-CHANNEL Single Mosfet Transistor 120.5A 1.98W 21ns 24V
설명
유통업체에서 제공한 Infineon IRL8113STRLPBF에 대한 설명입니다.
30V Single N-Channel HEXFET Power MOSFET in a D2Pak package, D2PAK-3, RoHS
Infineon SCT
Single N-Channel 30 V 7.1 mOhm 35 nC HEXFET® Power Mosfet - TO-263-3
Trans MOSFET N-CH 30V 105A 3-Pin(2+Tab) D2PAK T/R
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:105A; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.84 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance6 mΩ
Package Quantity800
Power Dissipation110 W
Rds On Max6 mΩ
Rise Time38 ns
Turn-Off Delay Time18 ns
Turn-On Delay Time14 ns
Dimensions
Height4.699 mm
Length10.668 mm
Width9.65 mm