공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-08-14
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
관련 부품
onsemiHUF76633S3S
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | MOSFET N-CH 100V 38A D2PAK
InfineonAUIRF540ZS
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
설명
유통업체에서 제공한 Infineon IRL540NSPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.044Ohm;ID 36A;D2Pak;PD 140W;VGS +/-16V
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) D2PAK
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
MOSFET, N, 100V, 36A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:100V; On Resistance Rds(on):44mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:140W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:36A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.1°C/W; Package / Case:D2-PAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:120A; SMD Marking:L540NS; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
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기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)36 A
Current Rating36 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance53 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time62 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.8 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Elements1
On-State Resistance44 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation3.8 W
Rds On Max44 mΩ
Recovery Time290 ns
Resistance44 mΩ
Rise Time81 ns
TerminationSMD/SMT
Threshold Voltage2 V
Turn-Off Delay Time39 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)100 V
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm