가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | HUF76633S3ST | 1,621 | 574 | |||||||||
| Rochester Electronics | HUF76633S3ST | 12,648 | 1h | |||||||||
| Microchip USA | HUF76633S3ST | 402 | 3500 | Tray | 18h | |||||||
| Win Source | WS-HUF76633S3ST | 1,580 | 45 | 2h | ||||||||
| Worldway Electronics | HUF76633S3ST | 17,503 | 7 | Bulk | 1h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-03-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2007-04-06
LTD Date2007-10-06
관련 부품
InfineonIPB35N10S3L26ATMA1
100V, N-Ch, 26.3 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T, PG-TO263-3, RoHS
InfineonIPB26CN10NGATMA1
MOSFET N-CH 100V 35A TO263-3 / Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) D2PAK T/R
설명
유통업체에서 제공한 onsemi HUF76633S3ST에 대한 설명입니다.
MOSFET N-CH 100V 38A D2PAK
MOSFETs 38a,100V, 0.036 Ohm Logic Level N-Ch
Power Field-Effect Transistor, 39A I(D), 100V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)39 A
Current Rating38 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance37 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time83 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.82 nF
Max Operating Temperature175 °C
Max Power Dissipation145 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation145 W
Rds On Max35 mΩ
Rise Time55 ns
Turn-Off Delay Time63 ns
Voltage Rating (DC)100 V