가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRL3713STRRPBF | 0 | 800 | Bulk | 13h | |||||||
| Win Source | WS-IRL3713STRRPBF | 1,400 | 2 | 22h | ||||||||
| Worldway Electronics | IRL3713STRRPBF | 18,496 | 7 | Tape & Reel | 21h | |||||||
| SHENGYU ELECTRONICS | IRL3713STRRPBF | 14,672 | 1 | 3d | ||||||||
| Run Hong Electronics | IRL3713STRRPBF | 8,322 | 8h |
대체 부품
Price @ 1000
$ 5.08
$ 7.61
$ 7.61
Stock
63,571
70,967
70,967
Authorized Distributors
1
2
2
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
30 V
30 V
30 V
Continuous Drain Current (ID)
75 A
75 A
75 A
Threshold Voltage
-
2.5 V
2.5 V
Rds On Max
3 mΩ
3 mΩ
3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
200 W
200 W
200 W
Input Capacitance
5.89 nF
5.89 nF
5.89 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-05-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
InfineonIRL3713SPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 260A;D2Pak;PD 330W;VGS +/-2
InfineonIRL7833SPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 150A;D2Pak;PD 140W;VGS +/-2
STMicroelectronicsSTB155N3LH6
N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in D2PAK package
설명
유통업체에서 제공한 Infineon IRL3713STRRPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 260A;D2Pak;PD 330W;VGS +/-2
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
Trans MOSFET N-CH 30V 260A 3-Pin(2+Tab) D2PAK T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:260A; On Resistance, Rds(on):3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance3 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.89 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation330 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance3 mΩ
Package Quantity800
Power Dissipation200 W
Rds On Max3 mΩ
Rise Time160 ns
Turn-Off Delay Time40 ns
Turn-On Delay Time16 ns
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm