Infineon IRL2910PBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.026Ohm;ID 55A;TO-220AB;PD 200W;VGS +/-16V

Single N-Channel 100 V 0.026 Ohm 140 nC HEXFET® Power Mosfet - TO-220-3

MOSFET N-CH 100V 55A TO220AB N-Channel 100 V 55A (Tc) 200W (Tc) Through Hole TO-220AB

100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 200 W

Trans MOSFET N-CH 100V 55A 3-Pin(3+Tab) TO-220AB

Power Field-Effect Transistor, 55A I(D), 100V, 0.03Ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor Fet, To-220Ab |Infineon IRL2910

MOSFET, N, 100V, 48A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:100V; On Resistance Rds(on):26mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:55A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:190A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.