공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2017-10-19
LTD Date2018-04-19
관련 부품
onsemiSGW23N60UFDTM
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB
onsemiFGB20N6S2D
Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-263AB
설명
유통업체에서 제공한 Infineon IRGS4620DPBF에 대한 설명입니다.
Trans IGBT Chip N-CH 600V 32A 140W 3-Pin(2+Tab) D2PAK Tube
Target Applications: Dryer; Fan; Lighting HID; Pump; Refridgeration; Solar; UPS; Washing Machine
IGBT, SINGLE, 1.55V, 32A, TO-263AB
140W 1.55V 600V 32A D2PAK 10.31mm*9.45mm*4.57mm
TUBE / G6, 600V, 20A, D2PAKCOPAK
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Weight260.39037 mg
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.55 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current32 A
Element ConfigurationSingle
Max Collector Current32 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Operating Temperature-40 °C
Power Dissipation140 W
Reverse Recovery Time68 ns
Schedule B8541290080
Turn-Off Delay Time83 ns
Turn-On Delay Time31 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm