공급망
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusObsolete (Last Updated: 5 months ago)
관련 부품
onsemiSGW23N60UFDTM
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-263AB
onsemiHGT1S3N60A4DS9A
Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB
onsemiFGB20N6S2D
Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-263AB
설명
유통업체에서 제공한 Infineon IRGS10B60KDTRRP에 대한 설명입니다.
Trans IGBT Chip N-CH 600V 22A 3-Pin(2+Tab) D2PAK T/R
Copacked 600V IGBT in a D2-Pak package with ultrafast 10-30 kHz soft recovery diode, D2PAKCOPAK, RoHS
Infineon SCT
IGBT UFAST 600V 22A COPACK D2PAK
Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel
Target Applications: Fan; Pump; Washing Machine
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
156W 1.8V 600V 22A D2PAK 4.83mm
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.8 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current35 A
Current Rating10 A
Element ConfigurationSingle
Fall Time34 ns
Max Collector Current22 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation156 W
Min Operating Temperature-55 °C
Number of Elements1
Package Quantity800
PackagingBulk
Power Dissipation104 W
Reverse Recovery Time90 ns
Rise Time29 ns
Turn-Off Delay Time230 ns
Turn-On Delay Time30 ns
Voltage Rating (DC)600 V
Dimensions
Height4.957 mm