관련 부품
onsemiNGTB40N60L2WG
IGBT TRENCH/FS 600V 80A TO247 / IGBT Trench Field Stop 600 V 80 A 417 W Through Hole TO-247-3
STMicroelectronicsSTGWA45HF60WDI
IGBT 600V 80A 310W TO247 / IGBT 600 V 80 A 310 W Through Hole TO-247-3
설명
유통업체에서 제공한 Infineon IRGPS66160DPBF에 대한 설명입니다.
Trans IGBT Chip N-CH 600V 240A 750000mW 3-Pin(3+Tab) Super-247 Tube
IRGPS66160D - IGBT WITH ULTRAFAS / IGBT 600 V 240 A 750 W Through Hole SUPER-247 (TO-274AA)
IGBT, SINGLE, 600V, 240A, TO-274AA; DC Collector Current: 240A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 750W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-274AA; No. o
Benefits: Low VCE(ON) and switching losses; Optimized diode for full bridge hard switch converters; Square RBSOA and maximum junction temperature 175C; 5s short circuit SOA; Positive VCE(ON) temperature coefficient; Lead-free, RoHS compliant
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins247
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.65 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current240 A
Element ConfigurationSingle
Max Collector Current240 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation750 W
Min Operating Temperature-40 °C
Number of Elements1
Power Dissipation750 W
Reverse Recovery Time95 ns
Turn-Off Delay Time190 ns
Turn-On Delay Time80 ns
Dimensions
Height25.05 mm
Length16.1 mm
Width5.5 mm