공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-06-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-06-30
LTD Date2018-12-31
관련 부품
설명
유통업체에서 제공한 Infineon IRGP4750DPBF에 대한 설명입니다.
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | IGBT 650V TO-247
Trans IGBT Chip N-CH 650V 70A 273000mW 3-Pin(3+Tab) TO-247AC Tube
IGBT, SINGLE, 650V, 70A, TO-247AC-3
IRGP4750 DISCRETE IGBT WITH ANTI-PARALL;
TUBE / G6.2, 650V, 50A, CO-PAK-247AC
273W 1.7V 650V 70A TO-247AC 20.7mm
Benefits: Low VCE(ON) and switching losses; 5.5s short circuit SOA; Square RBSOA; Maximum junction temperature 175C; Positive VCE(ON) temperature coefficient; Lead-free, RoHS compliant
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)650 V
Continuous Collector Current70 A
Element ConfigurationSingle
Fall Time40 ns
Max Collector Current70 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation273 W
Min Operating Temperature-40 °C
Number of Elements1
Power Dissipation273 W
Reverse Recovery Time150 ns
Rise Time50 ns
Turn-Off Delay Time105 ns
Turn-On Delay Time50 ns
Dimensions
Height24.99 mm
Length15.87 mm
Width5.31 mm