공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-06-26
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2017-10-19
LTD Date2018-04-19
관련 부품
InfineonIRGP4750DPBF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | IGBT 650V TO-247
설명
유통업체에서 제공한 Infineon IRGP4740DPBF에 대한 설명입니다.
Tube Through Hole ROHS3Compliant IGBT Transistor 2V @ 15V 24A 60A 250W 170ns
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | IGBT 650V TO-247
Benefits: Low VCE(ON) and Switching Losses; 5.5s Short Circuit SOA; Square RBSOA; Maximum Junction Temperature 175C; Positive VCE(ON) Temperature Coefficient; Lead-Free, RoHs compliant
IGBT, SINGLE, N-CH, 650V, 60A, TO-247AC; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247AC; No
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
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- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)650 V
Continuous Collector Current60 A
Fall Time40 ns
Max Collector Current60 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation250 W
Min Operating Temperature-40 °C
Number of Elements1
Power Dissipation250 W
Reverse Recovery Time170 ns
Rise Time45 ns
Turn-Off Delay Time73 ns
Turn-On Delay Time24 ns
Dimensions
Height24.99 mm