공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-07-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2017-03-16
LTD Date2017-09-16
관련 부품
InfineonIRGB4056DPBF
600 V, 12 A IGBT with anti-parallel diode in TO-220AB package, TO220COPAK-3, RoHS
InfineonIRGB10B60KDPBF
IRGB10B60 Series 600 V 22 A 156 W Insulated Gate Bipolar Transistor - TO-220AB
설명
유통업체에서 제공한 Infineon IRGB4715DPBF에 대한 설명입니다.
Trans IGBT Chip N-CH 650V 21A 100W 3-Pin(3+Tab) TO-220AB Tube
IGBT, SINGLE, 650V, 21A, TO-220AB-3
Insulated Gate Bipolar Transistor
Benefits: Low VCE(ON) and Switching Losses; 5.5s Short Circuit SOA; Square RBSOA; Maximum Junction Temperature 175C; Positive VCE(ON) Temperature Coefficient; Lead-Free, RoHs compliant
IGBT, SINGLE, 650V, 21A, TO-220AB-3; DC Collector Current: 21A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 100W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220AB; No. of
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
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- IR/INFINEON
- INFINEON/IR
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- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)650 V
Element ConfigurationSingle
Fall Time30 ns
Max Collector Current21 A
Max Operating Temperature175 °C
Max Power Dissipation100 W
Min Operating Temperature-40 °C
Number of Elements1
Reverse Recovery Time86 ns
Rise Time30 ns
Schedule B8541290080
Dimensions
Height16.51 mm
Length10.67 mm
Width4.83 mm