대체 부품
Price @ 1000
$ 16.2
$ 11.17
Stock
63,483
213,429
Authorized Distributors
1
1
Mount
Through Hole
Through Hole
Case/Package
TO-247-3
TO-247
Collector Emitter Breakdown Voltage
1.2 kV
1.2 kV
Max Collector Current
57 A
57 A
Power Dissipation
200 W
200 W
Collector Emitter Saturation Voltage
1.75 V
1.7 V
Reverse Recovery Time
-
-
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-02-09
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2018-06-30
LTD Date2018-12-31
관련 부품
InfineonAUIRG4PH50S
1200V DC-1 kHz (Standard) Discrete Automotive IGBT in a TO-247AC package, TO247-3, RoHS
InfineonIRG4PH50UPBF
Transistor; IGBT; TO-247AC; 45 A (Max.); 1200 V (Min.); 200 W (Max.); -55 degC
InfineonIRG4PH50KPBF
Transistor; IGBT; TO-247 AB; 45 A (Max.); 1200 V (Max.); 200 W (Max.); -55 degC
LittelfuseIXGH28N120B
Mid-Frequency Series - 300V - 1400V [15 - 40 kHz] PT (Punch Through) IGBTs, TO-247AD, RoHS
설명
유통업체에서 제공한 Infineon IRG4PH50S-EPBF에 대한 설명입니다.
1200V DC-1 KHZ (STANDARD) DISCRETE IGBT IN A TO-247AC PACKAGE W/ EXETENDED LEAD
IGBT, SINGLE, N-CH, 1.2KV, 57A, TO247AD; DC Collector Current: 57A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247AD;
Transistor; Transistor Type:IGBT; Transistor Polarity:N Channel; Collector Emitter Voltage, Vces:1200V; Continuous Collector Current, Ic:57A; Collector Emitter Saturation Voltage, Vce(sat):1.47V; Power Dissipation, Pd:200W ;RoHS Compliant: Yes
SINGLE IGBT, 18V, 57A; Transistor Type:I; SINGLE IGBT, 18V, 57A; Transistor Type:IGBT; DC Collector Current:57A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +155°C; No. of Pins:3; Continuous Collector Current Ic:57A
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage1.75 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current57 A
Element ConfigurationDual
Max Collector Current57 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation200 W
Turn-Off Delay Time845 ns
Turn-On Delay Time32 ns
Dimensions
Height24.99 mm
Length15.87 mm
Width5.3086 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책