공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-04-17
Lifecycle StatusObsolete (Last Updated: 7 months ago)
관련 부품
InfineonIRG4BC30SPBF
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package, TO220-3, RoHS
InfineonIRG4BC30UPBF
Transistor; IGBT; TO-220AB; 23 A; 600 V (Min.); 100 W (Max.); + 20 V (Max.)
onsemiHGTP7N60A4
Trans IGBT Chip N-CH 600V 34A 125000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 34A 125W TO220AB
InfineonIRG4BC30KDPBF
Trans IGBT Chip N-CH 600V 28A 100000mW 3-Pin(3+Tab) TO-220AB Tube, TO220COPAK-3, RoHS
설명
유통업체에서 제공한 Infineon IRG4BC30FPBF에 대한 설명입니다.
IRG4BC30FPbF Series 600 V 17 A N-Channel Fast Speed IGBT - TO-220AB
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Trans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB
FAST SPEED INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:31A; Collector Emitter Saturation Voltage, Vce(sat):1.8V; Power Dissipation, Pd:100W; Package/Case:TO-220AB ;RoHS Compliant: Yes
IGBT, TO-220; Transistor Type:IGBT; DC Collector Current:31A; Collector Emitter Voltage Vces:1.9V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:31A; Current Temperature:25°C; Fall Time Max:180ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:120A; Rise Time:15ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.99 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current31 A
Current Rating31 A
Element ConfigurationSingle
Fall Time270 ns
Max Collector Current31 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Operating Temperature-55 °C
Number of Elements1
Package Quantity1000
PackagingBulk
Power Dissipation100 W
Rise Time15 ns
TerminationThrough Hole
Turn-Off Delay Time200 ns
Turn-On Delay Time21 ns
Voltage Rating (DC)600 V
Dimensions
Height20.57 mm
Length10.54 mm
Width4.69 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책