Infineon IRG4BC10SDPBF

Name: Infineon IRG4BC10SDPBF
Brand: Infineon
SKU: IRG4BC10SDPBF

Trans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220AB

$ 1.89

Obsolete

제조업체 페이지 데이터시트

가격 및 재고

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모든 가격 할인 보기

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRG4BC10SDPBF	0	350	Bulk				1.890	1.890	9h
Win Source	WS-IRG4BC10SDPBF	1,150	35				1.507	1.224	1.224	18h
Worldway Electronics	IRG4BC10SDPBF	18,665	7	Tube		0.648	0.628	0.595	0.595	17h
Anlinkda	IRG4BC10SDPBF	29,713			1.150	1.030	0.886	0.865	0.824	1d
SHENGYU ELECTRONICS	IRG4BC10SDPBF	11,556	1		1.064	1.043	1.010	0.980	0.940	3d

CAD 모델

심볼, 풋프린트 및 3D STEP 다운로드

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데이터시트 및 문서

Infineon IRG4BC10SDPBF에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet10 페이지18년 전

RS (Formerly Allied Electronics)

Newark

DigiKey

공급망

Export Control Classification Number (ECCN) CodeEAR99

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2012-11-04

LTD Date2013-05-04

설명

유통업체에서 제공한 Infineon IRG4BC10SDPBF에 대한 설명입니다.

Trans IGBT Chip N-CH 600V 14A 3-Pin(3+Tab) TO-220AB

Verical

600V DC-1 kHz (Standard) Copack IGBT in a TO-220AB package

RS (Formerly Allied Electronics)

STANDARD SPEED COPACK INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB

ComSIT Distribution GmbH

IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.58 V Current release time: 720 ns Power dissipation: 38 W

Distrelec

IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:14A; Collector Emitter Saturation Voltage, Vce(sat):1.7V; Power Dissipation, Pd:38W; Package/Case:TO-220AB ;RoHS Compliant: Yes

Newark

IGBT, 600V, 14A, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:14A; Voltage, Vce Sat Max:1.7V; Power Dissipation:38W; Case Style:TO-220; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:18A; No. of Pins:3; Power, Pd:38W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:1080ns; Time, Rise:32ns; Transistors, No. of:1

Farnell