공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-01-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2008-12-02
LTD Date2009-06-02
관련 부품
STMicroelectronicsSTGF14NC60KD
STGF14NC60KD Series 600 V 11 A Flange Mount Short-Circuit Rugged IGBT - TO-220FP
onsemiSGS10N60RUFTU
Tube Through Hole N-CHANNEL SINGLE IGBT Transistor 2.8V @ 15V 10A 16A 55W 15ns/36ns
설명
유통업체에서 제공한 onsemi FGPF7N60LSDTU에 대한 설명입니다.
IGBT 600V 14A 45W Through Hole TO-220F
Trans IGBT Chip N-CH 600V 14A 45mW 3-Pin(3+Tab) TO-220F Rail
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBTs IGBT 600V 7A Low Sat CO-PAK
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Fall Time3.48 µs
Max Collector Current14 A
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation45 W
Reverse Recovery Time50 ns